Study the Structure Properties of Semiconductor Film Multilayered
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How to Cite

Study the Structure Properties of Semiconductor Film Multilayered. (2010). Al-Khwarizmi Engineering Journal, 6(2), 93-99. https://alkej.uobaghdad.edu.iq/index.php/alkej/article/view/492

Abstract

In this research was study the effect of increasing the number of layers of the semiconductor films as PbS on the average grain sizes and illustrate the relationship between the increase in the average grain size and thickness of the membrane, and membrane was prepared using the easy and simple and does not need the complexity of which is that the chemical bath , and from an X-ray diffraction found that the material and the installation of a random cubic and when increasing the number of layers deposited note the emergence of a number of vertices of a substance and PbS at different levels but the level is more severe (200) as well as the value is calculated optical energy gap and found to be not affected by increase thickness and from this value can be determined  the  applications of semiconductor materials and elected on the basis of Article absorbed optical radiation that incident on them.

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References

[1] R.S.Patil, H.M.Pathan, “Preparation and Charization of nanocrystalline lead Sulfide Thin Films by (SILAR) Method”, Department of Physics, Shivaji University, Kolapure, India, 2000.
[2] Pathan,H.&Lokhande,C.,”Deposition of Metal Cholcogenide thin film by SILVER method”, Mcgram-Hill,New York 1998.
[3] K.L.Chopra, “Thin Films Phenomena”, McGraw-Hill, New York, 1969.
[4] E.Gornik, H. Heinrich, “Physics of Narrow Gab Semiconductors”, Spring verlag, Berlin Heidelberg, New York, 1981.
[5] P.K.Nair and M.T.S. Nair, Solar Cells, 22,1987 , 103-122.
[6] L.P.Deshmukh,A.B.Palwe,and V.S.Sawant, SolerEnergy Materials,20,1990,341-348.
[7] H.M.Salma,"Physical Properties of CdS Prepeared by Chamical Bath Deposition" Department of Applied Scines, University of Technology,2006.
[8] B.D.Cullity and S.R.Stock,"Elements of X-Ray Diffractio",Third edition,Prentic-Hell in united states of American,2001.
[9] D.D. O. Eya,* A.J .Ekpunobi and C.E. Okeke,” Optical properties and applications of lead oxide thin film prepared by chemical Bath deposition Technique” Department of Industrial physics, Nnamdi Azikiwe University, Awka, Nigeria.
* Department of physics, federal University of Technology, Owerri, Nigeria,2003.
[10] S.M.Sze,"Physicas of Semicoundector Devices"Secound edition,Jon Wiley Sous,New York,1981.
[11] H. Yanglong,and K. Hiroshi "PbS Cubes with Pyramidal Pits: An Example of Etching Growth", Crystal growth &design,Vol 9,No.7, 3119-3123,2009.
[12] 12. M. SIHAM and H.OMAR," Growth and Characterization of Lead-Sulfide Films Deposited on Glass Substances, Code Fizea E4, ISSN1330-0008,2001.
[13] 13. Y. Dingshan, Ch.Yujie, and L. Baojun." Fabrication and characterization of PbS/ multiwalled carbon nanotube heterostructures, Applied Physics Letters 90, 161103 ,2007.

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